1. Ahn, K.-Y., and Gösele, U., "The Dissolution and Disintegration of Uniform SiO2 Layers during Direct Silicon Wafer Bonding," MRS-Proc. Vol. 107, Symp. Silicon on Insulators and Buried Metals in Semiconductors, (Pittsburgh, 1988) pp. 501-507.

2. Stengl, R., Ahn, K.-Y., Gösele, U., "Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment," Jap. Journal Appl. Phys. 27, L2364-L2366(1988).

3. Ahn, K.-Y., Stengl, R., Tan, T.Y., and Gösele, U., "Stability of Interfacial Oxide Layers During Silicon Wafer Bonding," J. Appl. Phys. 62, 561-563(1989).

4. Yang, W.-S., Ahn, K.-Y., Marioton, B.P.R., Stengl, R., and Gösele, U., "Gold Gettering in Directly Bonded Silicon Wafers," Jap. Journal Appl. Phys. 28, L721-724 (1989).

5. Ahn, K.-Y., Stengl, R., Gösele, U., and Smith, P., "TEM Investigation of Interfacial Oxide Layers between Directly Bonded Silicon Wafers," Proc. Microscopy of Semicond. Materials, Oxford, April 1989, Inst. Phys. Conf. Ser. No. 100: Section 7, 569-574 (1989).

6. Ahn, K.-Y., Stengl, R., Tan, T.Y., Gösele, U., and Smith, P., "Growth, Shrinkage, and Stability of Interfacial Oxide Layers between Directly Bonded Silicon Wafers," Appl. Phys. A50, 85-94 (1989).

7. Stengl, R., Ahn, K.-Y., Mii, T., Yan, W.-S., and Gösele, U., "Tunneling Structures Fabricated by Silicon direct Wafer Bonding," Jap. Journal Appl. Phys. 28, 2405-2412 (1989).

8. Stengl, R., Tan, T., and Gösele, U., "A Model for the Silicon Wafer Bonding Process," Jap. Journal Appl. Phys. 28, 1735-1741 (1989).

9. Lehmann, V., Mitani, K., Stengl, R., Mii, T., and Gösele, U., "Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom," Jap. Journal Appl. Phys. 28 L2141-2143 (1989).

10. Stengl, R., Mitani, K., Lehmann, V., and Gösele, U., "Silicon Wafer Bonding: Chemistry, Elastomechanics and Manufacturing," Proc. 1989 IEEE SOS/SOI Technology Conf., Stateline, Nevada (1989) p. 123-124.

11. Yang, W.-S., Ahn, K.-Y., Li, J., Smith, P., Tan, T.Y., and Gösele, U., "Gettering Phenomena in Directly Bonded Silicon Wafers," in Semiconductor Silicon 1990, H. Huff and K.G. Barraclough, eds. (The Electrochem. Soc., Pennington 1990) pp. 628-638.

12. Lehmann, V., Mitani, K., Ong, I.T.K., Stengl, R., and Gösele, U., "Semiconductor Wafer Bonding and Thinning Techniques," in Proc. Silicon-on-Insulator Technology and Devices, D.N. Schmidt, ed. (The Electrochem. Soc., Pennington 1990), pp. 213-224.

13. Lehmann, V., Gösele, U., and Mitani, K., "Contamination Protection of Semiconductor Surfaces by Wafer Bonding" Solid State Technology, April 1990, pp. 91-92.

14. Lehmann, V., Ong,. I.W.K., and Gösele, U., "Semiconductor Wafer Bonding" Advanced Materials 8, 372-374 (1990).

15. Mitani, K., Lehmann, V., and Gösele, U., "Bubble Formation during Silicon Wafer Bonding: Causes and Remedies," Tech. Digest for IEEE Solid State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, June 1990, in press.

16. Mitani, K., Lehmann, V., Stengl, R., Feijoo, D., Gösele, U., and Massoud, H.Z., "Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding," Jpn. J. Appl. Phys., 30, 615-622 (1991).

17. Gösele, U., Lehmann, V., Stengl, R., Mitani, K., Tan, T.Y., and Feijoo, D., "Particle Protection of Semiconductor Surfaces by Reversible Wafer Bonding and Related Concepts," in: Particles on Surfaces 3: Detection, Adhesion and Removal, K. Mittal, ed. (Plenum, 1992), New York, p. 239-247.

18. Lehmann, V., Mitani, K., Feijoo, D., and Gösele, U., "Implanted Carbon: An Effective Etch-stop in Silicon," J. Electrochem. Soc. 138, L3-L4 (1991).

19. Mitani, K., Tan, T.Y., Gösele, U., "Atomic Structure and Properties of Bonded Wafer Interfaces," Proc. Symp. Advanced Science and Technology of Silicon Materials, Hawaii, Nov. 1991, p..

20. Mitani, K., Feijoo, D., Cha, G., and Gösele, U., "A New Evaluation Method of Silicon Wafer Bonding Interfaces and Bonding Strength by KOH Etching," Jpn. J. Appl. Phys. 31 969-974 (1992).

21. Mitani, K., and Gösele, U., "Wafer Bonding Technology for Silicon-on-Insulator Applications: A Review," J. Electron. Materials 21, 669-676 (1992).

22. Cha, G., Yang, W.-S., Feijoo, D., Taylor, W.J., Stengl, R., and Gösele, U., "Silicon Wafers with Cavities Bonded in Different Atmospheres," Proc. First Int. Symp. Semicond. Wafer Bonding: Science, Technology and Applications, (The Electrochem. Soc., Pennington, N.J., 1992), p. 249-259.

23. Feijoo, D., Ong, I., Mitani, K., Yang, W.-S., Yu, S. and Gösele, U., "Prestressing of Bonded Wafers," Proc. First Int. Symp. Semicond. Wafer Bonding: Science, Technology and Applications, (The Electrochem. Soc., Pennington, N.J., 1992), p. 230-238.

24. Tong, Q.-Y., Feijoo, D., Cha, G., You, H.-M., and Gösele, U., "Etch-Stop Layers in Silicon Produced by Implantation of Electrically Inactive Impurities," Proc. Symp. Silicon-on-Insulators (The Electrochem. Soc., Pennington, N.J., 1992), 384-402.

25. Mitani, K., and Gösele, U., "Formation of Interface Bubbles in Bonded Silicon Wafers: A Thermodynamic Model," Appl. Phys. A, 54, 543-552 (1992).

26. Feijoo, D., Lehmann, V., Mitani, K., and Gösele, U., "Etch-Stop Barriers in Silicon Produced by Ion Implantation of Electrically Non-Active Species," J. Electrochem. Soc. 139, 2309-2314 (1992).

27. Tong, Q.-Y. Grafiteanu, R., and Gösele, U., "Water-Enhanced Debonding of Room- Temperature Bonded Silicon Wafers for Surface Protection Applications," Jpn. J. Appl. Phys. 31 (1992) 3483

28. Tong, Q.-Y., Grafiteanu, R., and Gösele, U., "Reversible Silicon Wafer Bonding for Surface

Protection: Water-Enhanced Debonding", J. Electrochem. Soc. 139 (1992) L101

29. Tong, Q-Y., You, H.-M., Cha, G., and Gösele, U., "Denuded Zone Formation in Carbon-Implanted Silicon and its Application to Device Quality Silicon-on-Insulator Preparation," Appl. Phys. Lett. 62, 970-972 (1993).

30. Tong, Q.-Y., and Gösele, U., "Fabrication of Ultrathin SOI by SIMOX Wafer Bonding," J. of Electronic Materials, 22 (1993) 763

31. Tong, Q.-Y., and Gösele, U., "VLSI SOI Fabrication by SIMOX Wafer Bonding," Proc. 1992 IEEE Int. SOI Conf. 92CH3196-3 (1992) 72

32. Tong, Q.-Y., You, H.-M., Cha, G., and Gösele, U., "Ultrathin SOI Formation by Carbon Implantation and Layer Transferring," Proc. 1992 IEEE Int. SOI Conf. 92CH3196-3 (1992) 10

33. K. Mitani, V. Lehmann and Q.-Y. Tong, "Surface Protection by Semiconductor Wafer Bonding", Proc. of 1st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, 92-7 (1991) 260

34. Q.-Y. Tong, H.-M. You, G. Cha and U. Gösele, "Ultrathin SOI Formation by Carbon Implantation and Layer Transferring", Proc. of IEEE Intl. SOI Conference, 92CH3196-3 (1992) 10

35. Q.-Y. Tong and U. Gösele, "VLSI SOI Fabrication by SIMOX Wafer Bonding(SWB)", Proc. of IEEE Intl.SOI Conference, 92CH3196-3 (1992) 72

36. Q.-Y. Tong, G. Cha, R. Gafiteanu and U. Gösele, "Low Temperature Wafer Direct Bonding", Proc.of 2st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, 93-29 (1993) 96

37. U. Gösele and Q.-Y. Tong, "Silicon Layer Transfer by Wafer Bonding", Invited paper, Proc.of 2st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, 93-29 (1993) 395

38. G. Cha, R. Gafiteanu, Q.-Y. Tong and U. Gösele, "Design Consideration for Wafer Bondingof Dissimilar Materials", Proc. of 2st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, 93-29 (1993) 257

39. U. Gösele and Q.-Y. Tong, "Semiconductor Wafer Bonding: An Overview", Invited talk, Intl. Conf. on Adv. Materials, Tokyo, Aug.31, 1993

40. Q.-Y. Tong, U. Gösele, C. Yaun and A. Steckl, "A Feasibility Study of SiC on Oxide by Wafer Bonding and Layer Transferring", Proc. of IEEE Intl. SOI Conference, 93CH3330- 8, 1993, p. 60.

41. Q.-Y. Tong, E. Schmidt, U. Gösele and M. Reiche, "Hydrophobic Silicon Wafer Bonding", Appl. Phys. Lett. 64 (1994) 625

42. Q.-Y. Tong, G. Cha, R. Gafiteanu and U. Gösele, "Low Temperature Wafer Direct Bonding", IEEE J. of Microelectromechanical Systems, 3 (1994) 29

43. Q.-Y. Tong and U. Gösele, "Semiconductor Wafer Bonding: Recent Developments", Invited paper, Materials Chem. and Phys., 37 (1994) 101

44. M. Reiche, U. Gösele and Q.-Y. Tong, "Interface Structure of Bonded Silicon Wafers", Semiconductor Silicon/1994, 7 th Intl. Symp. on Si materials Science and Technol., PV 94- 10, (The Electrochem. Soc., Pennington, N.J.), (1994) P. 408

45. A. J. Steckl, C. Yuan, Q.-Y. Tong and U. Gösele, "SiC SOI Structures by Direct Carbonization Conversion", Proc. of Spring Meeting of the Electrochem. Soc., San Francisco, May, Abstract 565 (1994)

46. A. J. Steckl, C. Yuan, Q.-Y. Tong, U. Gösele and M.J. Loboda, "SiC SOI Structures by Direct Carbonization Conversion and post growth from silacyclobutane", J. Electroch. Soc.141 (1994) L66

47. E. Schmidt, T. Martini, Q.-Y. Tong and U. Gösele, "Silicon Wafer Bonding in Vacuum", Spring Meeting of German Physics Society, Muenster, Germany, March (1994)

48. T. Martini, E. Schmidt, Q.-Y. Tong and U. Gösele, "Calculation of the Bond Velocity for Si-Wafer Bonding", Spring Meeting of German Physics Society, Muenster, Germany, March (1994)

49. Q.-Y. Tong, C.B. Eom, U. Gösele and A.F. Hebard, "Materials With A Buried C60 Layer Produced By Wafer Direct Bonding", J.Electroche. Soc. 141, L137 (1994)

50. Q.-Y. Tong, U. Gösele, T. Martini and M. Reiche, "Formation of Ultrathin Single Crystalline Si on Glass by Low Temperature Wafer Direct Bonding", Proc. 1994 IEEE Intl. SOI Conference, 94CH35722 (1994) 53

51. U. Gösele, M. Reiche and Q.-Y. Tong, "Lleben ohne Klebstoff", Phys. B1, 50 (1994) 851

52. Q.-Y. Tong, U. Gösele, C. Yaun and A. Steckl and M. Reiche, "Silicon Carbide Wafer Bonding", J.Electroche. Soc., 142 (1995) 232

53. Q.-Y. Tong, U. Gösele, T. Martini and M. Reiche, "Ultrathin Single Crystalline Si on Quartz (SOQ) by 150oC Wafer Bonding", J. Sensors and Actuators, 48 (1995)

54. U. Gösele, M. Reiche and Q.-Y. Tong, "Properties of SIMOX and Bonded SOI Materilas", Invited talk, Proc. of 9th Beennial Intl. Conf. on Insulating Films on Semiconductor", Grenoble, France, June 1995

55. Q.-Y. Tong, T.-H. Lee, W.-J. Kim, T.Y. Tan, Gösele, H.-M. You, W.Yun and J.K.O. Sin, " Feasibility Study of VLSI Device Layer Transfer by CMP PETEOS Direct Bonding", Proc. 1996 IEEE Intl. SOI Conference, 96CH35937 (1996) 36

56. U. Gösele, K. Gutjahr, S. Hopfe, S. Mack, T. Martini, M. Reiche and Q.-Y. Tong, "Silicon Wafer Bonding: Recent Developments", Proc. 2nd Int. Symp. on Advanced Science and Technology of sSilicon Materials, Nov. 96, Hawaii, in press