Welcome to Prof. Qin-Yi Tong's Homepage

ADDRESS & TELEPHONE

Office:
Ziptronix Incorporation
800 Perimeter Park
Morrisville, NC 27560
Tel: (919) 459 2435
Fax: (919) 459 2401
E-mail: q.tong@ziptronix.com and/or material@acpub.duke.edu

CURRENT POSITION

Chief Scientist of Ziptronix Inc.

EDUCATION

Ph.D. (equiv.), Tsing Hua University, Peking (Beijing), China

ACADEMIC AND INDUSTRIAL EXPERIENCES

• Oct. 2002-present:
  Chief Scientist of Ziptronix Inc, RTP, NC.
• Aug. 1998--Oct. 2002:
  Manager of Wafer Bonding Lab, Research Triangle Institute, and Adjunct Professor, Department of Mechanical Engineering and Material Science, Duke University.
• Nov. 1995-July, 1998:
  Wafer bonding Lab. Duke University, USA and Max-Planck-Institute for Microstructure Physics, Halle/Saale, Germany, Senior Scientist.
• July 1991-July 1995:
  Wafer Bonding Lab. Duke University, USA. Visiting Professor.
• Sept. -Dec. 1993:
  Max-Planck-Institute for Microstructure Physics, Halle/Saale, Germany. Visiting Professor.
• 1984-2004:
  Southeast University, Nanjing, China. Professor and Director of Microelectronics Center.
• 1963-1984:
• Nanjing Institute of Technology, Nanjing, China. Assistant Professor, Lecturer, Associate Professor of Electronic Engineering.
• Director of Electronics Research Institute of Nanjing Institute of Tech.
• Feb.-May 1986:
  Silicon Facility, Physics and Engineering Laboratories, Lower Hutt, New Zealand, Senior Postdoctoral Fellow.
• 1980-1982:
  Edinburgh Microfabrication Facility, University of Edinburgh, Edinburgh, U.K. Visiting Research Fellow.
• 1969-1976:
  No. 24 Semiconductor Components Factory, Nanjing, China. Supervisor and Engineering Consultant

HONORS

• Awarded a title of "Nation's Outstanding Expert" by Chinese State Committee of Science and Technology in 1986.
• Senior Member of IEEE (1989-present) which requires outstanding achievements for its senior members and Fellows
• Member of Steering Committee of International Solid-State Sensors and Actuators Conference ("Transducers") (1987-1995), was the only member who was from China. * Fellow of Chinese Electronics Institute (1988-present) which requires distinguished achievements for its Fellows
• Editorial board member of international academic journal "Sensors and Actuators " (1986-1993), was the only member who was from China
• Invited Chinese Representative of European Solid State Device Research Conference (1987, 1988)
• Member of academic advisory division of Chinese National Degree Committee (1986-) which acts as the judge of the work of others in the related academic fields for eligibility for offering Ph.D degree programs
• Editorial member of "Asia-Pasific Engineering Journal"
• Referee for New Zealand's Foundation for Research, Science & Technology (1995, 1996)

AUTHORSHIP OF SCHOLARLY BOOKS, PAPERS AND PATENTS

I. Author or co-author of three books:

1. Q.-Y. Tong, "Introduction to VLSI Physics", (1988, 384 pages, ISBN7-5053-0081- 4/TN.44, in Chinese)

2. Q.-Y. Tong, "Introduction to Microelectronic System Design" (1990, 444 pages, ISBN7- 81023-219-3, in Chinese)

3,Q.-Y. Tong and U. Gösele, "Science and Technology of Semiconductor Wafer Bonding", published by John Wiley and Sons, USA (1999), ISBN 0-471-57481-3. For Detailed Information

II. Guest Editor of one book:

"Sensors and Actuators", special issue on sensor research in China, Vol.19, No.1, 1988, Elsevier Sequoia S. A., Switzerland, ISSN 0250-6874

III. 184 refereed journal and conference proceeding papers have been published including 99 refereed academic journal publications and 85 refereed academic conference publications. At least 160 papers published by others in international academic journals or proceedings quoted the results of my work published in 70 academic papers recently (1991-1997). Since 1984, 18 invited talks were presented at international institutions and 20 invited papers were published in international journals and conferences. I was one of the technical session chairmen at 187th and 192nd International Conference of the Electrochemical Society, May 1995 and September 1997. For Detailed Information

IV. Patents: 7 Chinese patents and 7 US patents:

1. "A Low/High Voltage Driver", Chinese patent 85200131.2

2. "A PMOS Low/High Voltage Converter", Chinese patent 85200132.0

3. "A CMOS Integrated Flow Sensor", Chinese patent 85200263.7

4. "A Constant Chip Temperature CMOS Integrated Flow Sensor", Chinese patent 8524747

5. "Process Technology of Semiconductor Direct Bonding", Chinese patent 87108314

6. "A Dual-gate High Voltage MOS IC", Chinese patent 87208602X

7. "Method of thinning bonded silicon on insulator", 92107693.2 (Chinese Patent)

8 1. Q.-Y. Tong, L. Tong and U. Gösele, "Method for the Cleaning and Direct

Bonding of Solids", U.S. No. 5915193 (filing 1995; allowed 11/6/98).

2. Q.-Y. Tong and U. Gösele, "Method for the transfer of thin layers of monocrystalline

materials", U.S. Patent No. 5877070 (filing 1997; allowed 9/14/98).

3. Q.-Y. Tong and U. Gösele, “Method for the transfer of thin layers of monocrystalline

material onto a desirable substrate”, U.S. Patent No. 6150239 (filing1998, issued

11/21/2000).

4. Q.-Y.Tong, P. Enquist and G. Fountain, “Method for low temperature bonding and bonded

structure” US Patent application 09/505,283 (2000, allowed 6/2004)

5. Q.-Y. Tong, “A method of epitaxial-like wafer bonding at low temperature and bonded

structure”, US Patent No. 6563133 (filing 2000, issued 5/13/2003)

6. Q.-Y. Tong, “Low temperature metal direct bonding”, US Patent application (2002, allowed 7/2004)

7. Q.-Y. Tong, “Method of room temperature direct bonding”, US Patent application (2003)

ACHIEVEMENT EXAMPLES

• Initiated a constant chip temperature (CCT) silicon sensors for flow rate, vacuum and temperature measurements
• Developed a fully depleted complementary buried channel MOS device design and fabrication technology using bonded SOI wafers
• Initiated a plasma surface activation technology for wafer direct bonding
• Suggested carbon denuded zone formation during high temperature annealing in carbon implanted Si and its application to wafer bonding and ultra-thin SOI preparation.
• Proposed a mechanism of hydrophobic silicon wafer bonding.
• Developed a room temperature wafer direct bonding technology that makes silicon-based dissimilar material integration possible for advanced semiconductor devices and micromechanics.
• Discovered a low temperature semiconductor surface cleaning method to remove thermally unstable organic contamination which can enhance the device yield and avoid thermal bubbles at the interface of a bonded wafer pair .
• Obtained activation energies for microcrack formation and suggested a model of layer splitting by H-implantation in semiconductor substrates.

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