No. of Refereed Journal Publications: 80

No. of Refereed Conferences Publications: 73

No. of Patents or patent applications: 14

No. of Books (published or to be published): 4

No. of Referred Conference Publications: 34

No. of Patent or patent applications: 8

No. of Book in writing: 1

1. Q.-Y. Tong, R. Gafiteanu and U. Gösele, "Reversible Silicon Wafer Bonding for Surface Protection: Water-Enhanced Debonding", J. Electrochem. Soc. 139 (1992) L101

2. Q.-Y. Tong, R. Gafiteanu and U. Gösele, "Water-Enhanced Debonding of Room-Temperature Bonded Silicon Wafers for Surface Protection Applications", Jpn. J. Appl. Phys. 31 (1992) 3483

3. J.-B. Huang, Q.-Y. Tong and P.-S. Mao, "Gas-lubricated microbearings for microactuators", Sensors and Actuators A, 35 (1992) 69

4. Q.-Y. Tong, H.-M. You, G. Cha and U. Gösele, "Denuded Zone Formation in Carbon--Implanted Silicon and Its Application to Device Quality Silicon-on- Insulator Preparation", Appl. Phys. Lett. 62 (1993) 970

5. J.-B. Huang, P.-S. Mao, Q.-Y. Tong and R.-Q. Zhang, "Study on Si Electrostatic and Electroquasistatic Micromotors", Sensors and Actuators A, 35 (1993) 171

6. Q.-A. Huang, Q. -Y. Tong and S.-J. Lu, "GaAs Piezoelectric Modulated Resistors", Sensors and Actuators A, 35 (1993) 247

7. J. Zheng, J. Wu, T. Wei, Y. Wang, S. Wang and Q. Tong, "77 K Operation of Amorphous Si/Si Heterojunction Bipolar Transistors", Jpn. J. Appl. Phys., 32 (1993) 2632

8. Q.-Y. Tong and U. Gösele, "Fabrication of Ultrathin SOI by SIMOX Wafer Bonding (SWB)", J. of Electronic Materials, 22 (1993) 763

9. Q.-Y. Tong, E. Schmidt, U. Gösele and M. Reiche, "Hydrophobic Silicon Wafer Bonding", Appl. Phys. Lett. 64 (1994) 625

10. Q.-Y. Tong, G. Cha, R. Gafiteanu and U. Gösele, "Low Temperature Wafer Direct Bonding", IEEE J. of Microelectromechanical Systems, 3 (1994) 29

11. Q.-Y. Tong and U. Gösele, "Semiconductor Wafer Bonding: Recent Developments", Invited paper, Materials Chem. and Phys., 37 (1994) 101

12. A. J. Steckl, C. Yuan, Q.-Y. Tong, U. Gösele and M.J. Loboda, "SiC SOI Structures by Direct Carbonization Conversion and post growth from silacyclobutane", J. Electroch. Soc.141 (1994) L66

13. Q.-Y. Tong, C.B. Eom, U. Gösele and A.F. Hebard, "Materials With A Buried C60 Layer Produced By Wafer Direct Bonding", J.Electroche. Soc. 141 (1994) L137

14. Q.-Y. Tong, U. Gösele, C. Yaun and A. Steckl and M. Reiche, "Silicon Carbide Wafer Bonding", J.Electroche. Soc., 142 (1995) 232

16. U. Gösele, M. Reiche and Q.-Y. Tong, "Lleben ohne Klebstoff" (in German), Phys. B1, 50 (1994) 851

17. Q.-Y. Tong, S. Hsia, U. Gösele, H. Zimmermann and M. Reiche, "A Flexible Built- Gettering Layer Prepared by Hydrophobic Si Wafer Bonding", Materials Chem. & Phys. 45 (1996) 223

18. Q.-Y. Tong and U. Gösele, "Thickness Considerations in Silicon Wafer Bonding J. Electronchemic. Soc.142 (1995) 3975

19. M. Reiche, S. Hopfe, U. Gösele and Q.-Y. Tong, "Multiple Internal Reflection Spectroscopy of Bonded Silicon Wafers", Appl. Phys. A, 61 (1995) 101.

20. U. Gösele, M. Reiche and Q.-Y. Tong, "Properties of SIMOX and Bonded SOI Material", Microelectronic Engineering, 28 (1995) 391

21. M. Reiche, Q.-Y. Tong, J. Ramm, S. Hopfe and U. Gösele, "Effect of Low Temperature Plasma Chemical Cleaning on The Interface Structure of Bonded Si Wafers", submitted to Phys.Status Solidi (a).

22. Q.-Y. Tong, G. Kaido, L. Tong, M. Reiche, F. Shi, J. Steinkirchner, T.Y. Tan and U. Gösele, "A Simple Chemical Treatment for Preventing Thermal Bubbles in Semiconductor Wafer Bonding", J. Electrochem. Soc. 142 (1995) L201.

23. U. Gösele, H. Stenzel, M. Reiche, T. Martini, J. Steinkirchner and Q.-Y. Tong, "History and Future of Semiconductor Wafer Bonding", Solid State Phenomena, 47-48 (1996) 33.

24. Q.-Y. Tong, T.-H. Lee, U. Gösele, M. Reiche, J. Ramm and E. Beck, "The Role of Surface Chemistry in Bonding of Standard Silicon Wafers", J. Electrochem. Soc. 144 (1997) 384

25. M. Reiche, Q.-Y. Tong, U. Gösele and J. Heydenreich, "Interface Defects of Bonded Silicon Wafers", Material Science Forum, 196-201 (1995) 1847

26. U. Gösele, S. Hopfer, S. Li, S. Mack, T. Martini, M. Reiche, E. Schmidt, H. Stenzel and Q.-Y. Tong, "What determines the bonding speed in silicon wafer bonding?", Appl. Phys. Lett. 67 (1995) 863

27. M.N. Niu, Z.-M. Teng, T. Xiang, X.-F. Ding and Q.-Y. Tong, "A novel surface-site model for the oxide/aqueous electrolyte interface", Jpn. J. Appl. Phys. 12A (1995) 6372

28. M. Reiche, S. Hopfe, U. Gösele, H. Struzberg and Q.-Y. Tong, "Characterization of Interfaces of Directly Bonded Silicon Wafers: A Comparative Study of Second Ion Mass Spectroscopy, Multiple Internal Reflection Spectroscopy and Transmission Electron Microscopy, Jpn. J. Appl. Phys., 35 (1996) 2102.

29. Q.-Y. Tong and U. Gösele, "A model of low-temperature wafer bonding and its applications", J. Electronchemic. Soc.143 (1996) 1773

30. Q.-Y. Tong, T.-H. Lee, K. Gutjahr, S. Hopfer and U. Gösele, "Layer splitting process in hydrogen-implanted Si, Ge, SiC and diamond substrates", Appl. Phys. Lett. 70 (1997) 1390.

31. E. Schroer, S. Hopfe, Q. Y. Tong, U. Goesele, and W. Skorupa, "Growth of buried oxide layers of SOI-structures by thermal oxidation of the top silicon layer", J. Electronchemic. Soc. 144 (1997) 2205.

32. Q.-Y. Tong, T.-H. Lee, P. Werner, U. Gösele, R.B. Bergmann and J.H. Werner "Fabrication of single crystalline SiC layer on high temperature glass", J. Electrochem. Soc., 144 (1997) L111.

33. M. Reiche, S. Hopfe, U. Gösele and Q.-Y. Tong, "Characterization of buried interfaces by multiple internal reflection spectroscopy (MIRS)", Mikrochim. Acta 125 (1997) 367.

1. Q.-Y. Tong, H.-Z. Zhang and M. Qin, "Lateral Gap Diffusion (LGD) in Silicon Wafer Direct Bonding Technology", Proc. of 1st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc., 92-7 (1991) 112

2. K. Mitani, V. Lehmann and Q.-Y. Tong, "Surface Protection by Semiconductor Wafer Bonding", Proc. of 1st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. And Applications, The Electrochem. Soc.,92-7 (1991) 260

3. Z. Chen, Q.-Y. Tong, H.-Z. Zhang and M. Qin, "Investigation on Negative Charges in Bonded SOI Structure", Proc. of 1st Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. And Applications, The Electrochem. Soc., 92-7 (1991) 112

4. Q.-Y. Tong, D. Feijoo, G. Cha, H.-M. You and U. Gösele, "Etch-stop Layers in Silicon Produced by Implantation of Electrically Inactive Impurities", Proc. of 5th Intl. Symp. on SOI Techol. and Devices, PV 92-13 (1992) 384

5. Q.-Y. Tong, H.-M. You, G. Cha and U. Gösele, "Ultrathin SOI Formation by Carbon Implantation and Layer Transferring", Proc. of IEEE Intl. SOI Conference, 92CH3196-3 (1992) 10

6. Q.-Y. Tong and U. Gösele, "VLSI SOI Fabrication by SIMOX Wafer Bonding(SWB)", Proc. of IEEE Intl. SOI Conference, 92CH3196-3 (1992) 72

7. Q.-Y. Tong, G. Cha, R. Gafiteanu and U. Gösele, "Low Temperature Wafer Direct Bonding", Proc.of 2nd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. And Applications, The Electrochem. Soc.,93-29 (1993) 96

8. U. Gösele and Q.-Y. Tong, "Silicon Layer Transfer by Wafer Bonding", Invited paper, Proc.of 2nd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc.,93-29 (1993) 395

9. G. Cha, R. Gafiteanu, Q.-Y. Tong and U. Gösele, "Design Consideration for Wafer Bonding of Dissimilar Materials", Proc. of 2nd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc., PV 93-29 (1993) 257

10. U. Gösele and Q.-Y. Tong, "Semiconductor Wafer Bonding: An Overview", Invited talk, Intl. Conf. on Adv. Materials, Tokyo, Aug.31, 1993

11. Q.-Y. Tong, U. Gösele, C. Yaun and A. Steckl, "A Feasibility Study of SiC on Oxide by Wafer Bonding and Layer Transferring", Proc. of IEEE Intl. SOI Conference, 93CH3330-8, 1993, p. 60.

12. M. Reiche, U. Gösele and Q.-Y. Tong, "Interface Structure of Bonded Silicon Wafers", Semiconductor Silicon/1994, 7th Intl. Symp. on Si materials Science and Technol., PV 94-10, (The Electrochem. Soc., Pennington, N.J.), (1994) P. 408

13. A. J. Steckl, C. Yuan, Q.-Y. Tong and U. Gösele, "SiC SOI Structures by Direct Carbonization Conversion", Proc. of Spring Meeting of the Electrochem. Soc., San Francisco,

14. E. Schmidt, T. Martini, Q.-Y. Tong and U. Gösele, "Silicon Wafer Bonding in Vacuum", Spring Meeting of German Physics Society, Muenster, Germany, March (1994)

15. T. Martini, E. Schmidt, Q.-Y. Tong and U. Gösele, "Calculation of the Bond Velocity for Si-Wafer Bonding", Spring Meeting of German Physics Society, Muenster, Germany, March (1994)

16. Q.-Y. Tong, U. Gösele, T. Martini and M. Reiche, "Formation of Ultrathin Single Crystalline Si on Glass by Low Temperature Wafer Direct Bonding", Proc. 1994 IEEE Intl. SOI Conference, 94CH35722 (1994) 53

17. Q.-Y. Tong and U. Gösele, "Thick Wafer Bonding", Proc.of 3rd Intl. Symp. on Semicond.

Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc.,95-7(1995) 155

18. Q.-Y. Tong and U. Gösele, "Process Design of Low Temperature Wafer Bonding", Proc.of 3rd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc.,95-7(1995) 78

19. T. Feng, Q.-Y. Tong, J. Askinazi and U. Gösele, "Application of Direct Bonding to the Fabrication of Si/ZnS Composite Infrared Windows", Proc.of 3rd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc.,95-7(1995) 597

20. T. Martini, E. Schmidt, S. Mack, H. Stenzel, S. Li, Gösele and Q.-Y. Tong, "What determines the bonding speed in silicon wafer bonding?", Proc.of 3rd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications, The Electrochem. Soc.,95-7(1995) 147

21. U. Gösele, M. Reiche and Q.-Y. Tong, "Properties of SIMOX and Bonded SOI Material", Invited talk, Proc. of 9th Beennial Intl. Conf. on Insulating Films on Semiconductor", Grenoble, France, June 1995

22. M. Reiche, Q.-Y. Tong, U. Gösele and J. Heydenreich, "Interface Defects of Bonded Silicon Wafers", Proc. of 18th Intl. Conf. on Defects in Semiconductors, July 1995, Sendai, Japan

23. Q.-Y. Tong, G. Kidao, T.Y. Tan and U. Gösele, "Wafer Bonding of Si With Dissimilar Materials", ICSITC'95, Beijing, Oct. (1995) 524

24. U. Gösele, M. Reiche and Q.-Y. Tong, "Wafer Bonding: An Overview", ICSITC'95, Beijing, Oct. (1995) 243

25. M. Niu, X. Ding and Q.-Y. Tong, "A Novel Site-Binding Model for H+-Ion Sensitive Field-

Effect Transistor", Proc. of The 6th Int. Meeting on Chem. Sensors, Gaithersburg, MD, July (1996)

26. M. Niu, X. Ding and Q.-Y. Tong, "Effect of Two Types of Surface Site on Sensitive Characteristic of Si3N4-Gate Ph-ISFET", Proc. of The 6th Int. Meeting on Chem. Sensors, Gaithersburg, MD, July (1996)

27. M. Niu, X. Ding and Q.-Y. Tong, "Development of a Novel Micro FIA-ISFET Integrated Sensor", Proc. of The 6th Int. Meeting on Chem. Sensors, Gaithersburg, MD, July (1996)

28. C.B. Eom, L. Huang, R.A. Rao, Q.-Y. Tong and U. Gösele, "Fabrication of Double Sided YBa2Cu3O7 Thin Films on 2 inch Diameter LaAlO3 Wafers by Direct Wafer Bonding", 1996Applied Superconducting Conference, Pittsburgh, PA, Aug. 25-30 (1996)

29. Q.-Y. Tong, T.-H. Lee, W.-J. Kim, T.Y. Tan, Gösele, H.-M. You, W.Yun and J.K.O. Sin, " Feasibility Study of VLSI Device Layer Transfer by CMP PETEOS Direct Bonding", Proc. 1996 IEEE Intl. SOI Conference, 96CH35937 (1996), p.36

30. U. Gösele, K. Gutjahr, S. Hopfe, S. Mack, T. Martini, M. Reiche and Q.-Y. Tong, "Silicon Wafer Bonding: Recent Developments", Proc. 2nd Int. Symp. on Advanced Science and Technology of Silicon Materials, Nov. 96, Hawaii, p.206

31. U. Gösele, D. Conrad, P. Werner, Q.-Y. Tong, R. Gafiteanu and T.Y. Tan, "Point defects, diffusion and gettering in silicon", Invited paper, Mater. Reasear. Soc. Spring Meeting, 1997

32. T.-H. Lee, Q.-Y. Tong, H.-Z. Zhang, X.-F. Ding and J.K.O. Sin, "Layer transfer onto a dissimilar material substrate by wafer bonding and layer-splitting", The 4th Intl. Symposium on Wafer Bonding: Science, Techn. and Appli., Paris, France, Aug. 1997

33. Q.-Y. Tong, T.-H. Lee, L.J. Huang, Y.-L. Chao W.J. Kim and U. Gösele, "Design considerations of Si layer transfer by H implantation", The 4th Intl. Symposium on Wafer Bonding: Science, Techn. and Appl., Paris, France, Aug. 1997

34. T.-H. Lee, Q.-Y. Tong, Y.-L. Chao and U. Gösele, "Silicon on quartz by a smarter cut process", The 8th Intl. Symposium on Silicon-on-Insulator Techn. & Devices, Paris, France, Aug. 1997

35. U. Gösele, D. Conrad, H. Reiche, M. Alexe, P. Kopperschmidt, K. Scheerschmidt, G. Kraeuter, T. Martini, S. Mack, A. Ploessl, H. Stenzel, H. Kaestner, Q.-Y. Tong and T.-H. Lee, " Recent developments in semiconductor wafer bonding", Silicon on insulator workshop, April'97, DERA, Malvern, U.K.

1. Q.-Y. Tong, L. Tong and U. Gösele, "Method for the Cleaning and Direct bonding of Solids", U.S.Patent Application No. 08/444,035.

2. G. Chen and Q.-Y. Tong, "Nanometer and Gigahertz Microprobe", Duke University invention disclosure form filed (4/28/1995), to be applied for a US Patent.

3. Qin-An Hunag, Hui-Zhen Zhang, Jun-Nin Chen and Qin-Yi Tong, "Method of thinning bonded silicon on insulator", 92107693.2 (Chinese Patent)

4.Q.-Y. Tong and T.-H. Lee, "A thinning method for semiconductor layer transfer", Invention disclosure and U.S. Patent application (1996).

5.Q.-Y. Tong and U. Gösele, "Layer transfer method by hydrogen implantation and wafer bonding", Invention disclosure and U.S. Patent application (1997).

6.T.-H. Lee, Q.-Y. Tongand U. Gösele, "Method for transferring processed semiconductor layers onto desired substrates", Invention disclosure and U.S. Patent application (1997).

7.Q.-Y. Tong, T.-H. Lee and U. Gösele, " A wafer bonding method for dissimilar material layer transfer ", Invention disclosure and U.S. Patent application (1997).

8.Q.-Y. Tong, T.-H. Lee and U. Gösele, "Infrared imaging in reflection mode for inception of bonding interfaces", Invention disclosure and U.S. Patent application (1997).

1. Q.-Y. Tong and U. Gösele "Science and Technology of Semiconductor Wafer Bonding", John Wiley and Sons, to be published in 1997

 PUBLICATIONS:

No. of Refereed Journal Publications: 47

No. of Refereed Conferences Publications: 38

No. of Patents: 6

No. of Books: 3

 LIST OF REFEREED JOURNAL PUBLICATIONS (Co-authored):

  1. "A CMOS Process for VLSI Instrumentation", Micro- electronics Journal, Vol.13, No.6, pp.29-32, 1982

2. "Investigation and Application of Si Gate Planar CMOS IC Design Rules", Journal of Nanjing Institute of Technology, No.3, pp.96-105, 1984 (in Chinese)

3. Device Design and Process of 300 Volts Fully Compatible CMOS IC", Journal of Nanjing Institute of Technology, No.4,pp.68-75, 1984 (in Chinese)

4. "Compatible Process Based on N-Well CMOS", Journal of Microelectronics and Computers, No.4, pp.18-23, 1984 (in Chinese)

5. "Process and Device Design of a Fully Compatible 300-Volt CMOS IC", Journal of Nanjing Institute of Technology, Vol.2, pp.1-11,1985

6. "Wafer scale Integration and Fault Tolerance Technology", Journal of Microelectronics and Computer, No.3, pp.37-41, 1986 (in Chinese)

7. "High Voltage CMOS Inverter", Journal of Microelectronics and Computer, No.11, pp.32-34, 1986 (in Chinese)

8. "A Novel Low/High Voltage NMOS Interface Circuit", Semiconductor Technology, No.4, 1986 (in Chinese)

9. "A CMOS Integrated Silicon Flow Sensor", Acta Electronica Sinica, No.1, pp.112-114, 1987 (in Chinese)

10. "N-Well CMOS Compatible Technology", Semiconductor Technology, No.1, pp.26-30, 1987(in Chinese)

11. "An Negative-Resistance Breakdown-Free High voltage Integrated MOS Device", Research and Development of Solid-state Electronics, Vol.7, No.3, pp.204-211,1987 (in Chinese)

12. "Trends of Silicon Integrated Sensors", Research and Development of Solid-state Electronics, Vol.7, No.3, pp.235-242,1987 (in Chinese)

13. "Fault Tolerance Design for Wafer Scale Integration", Research and Development of Solid-state Electronics, Vol.7, No.4, pp.296-303,1987 (in Chinese)

14. "Potential and Problems of SOI Technology", Journal of Microelectronics and Computer, Vol.4, No.10, pp.19-23, 1987(in Chinese)

15. "Some Material Structural Properties of SOI Substrate Produced by SDB Technology", Applied Surface Science, Vol.30, pp.397-401,1987

16. "A Novel CMOS Flow Sensor with Constant Chip Temperature(CCT) Operation", Sensors and Actuators, Vol.12, No.1, pp.9-21, 1987

17. "State-of-the Art of Semiconductor Flow Sensor Research, Sensor Technology, No.6, pp.30-34, 1986(in Chinese)

18. "Performance Comparisons of GaAs and Silicon Ultra High Speed Digital IC", Research and Development of Solid-State Electronics, Vol.9, No.41 pp.92-99,1988 (in Chinese)

19. "Calculation and Analysis of Heat Convection in CMOS Flow Sensors", Sensor Technology, No.4, pp.2-6, 1987(in Chinese)

20. "A Fully Integrated Flow Sensor", Chinese Journal of Semiconductor, Vol.5, No.12, 1988(in Chinese)

21. "GaAs/Si Compatible Technology", Journal of Microelectronics and Computer, Vol.5, No.12, pp.19-23, 1988(in Chinese)

22. "Silicon on Quartz by Solid-State Diffusion Bonding (SSDB) Technology", Electronics Letters, Vol.24, No.11, pp.691-692, 1988

23. "Constant-Temperature Integrated Vacuum Sensor", Electronics Letters, Vol.24, No.23, pp.1429-1430, 1988

24. "High Voltage PMOS Integrated Device and Process Design", Journal of Microelectronics and Computer, Vol.10, No.12, pp.5-9, 1988(in Chinese)

25. "Silicon System Design and Fabrication Methodology", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.324, 1988 (in Chinese)

26. "A New Constant Temperature Integrated Temperature Sensor", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.338,1988 (in Chinese)

27. "A Thinning Technology for SOI/SDB - Mechanism Investigation and Application of Electrochemical Etching with Self-Stop Feature", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.353, 1988 (in Chinese)

28. "Investigation on Polysilicon Bridge in Multi-Function Integrated Sensor", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.375, 1988 (in Chinese)

29. "A New High Performance SOI/SDB Complementary Inverter", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.429, 1988 (in Chinese)

30. "VLSI Architecture Design Methodology", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.444, 1988 (in Chinese)

31. "Sensor Applications of Patter Recognition Technique", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.462, 1988 (in Chinese)

32. "A Fault Tolerance Method of Array Structure Matrix Multiplier", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.464, 1988 (in Chinese)

33. "VLSI Tactile Array Sensor System", Research and Development of Solid-state Electronics, Vol.8, No.4, pp.471, 1988 (in Chinese)

34. "Fault Tolerance Design of VLSI Two-Level Array", Chinese Journal of Computer, Vol.12, No.9, pp.710-713, 1989(in Chinese)

35. "A Silicon Integrated Temperature and Vacuum Sensor with CCT Operation Principle", Acta Electronia Ainica, Supplement, March, 1989

36. "Integrated Multi-Function Sensor For Flow Velocity, Temperature and Vacuum Measurement", Special Issue of Sensor Research in China, Sensors and Actuators, Vol. 19, No.1, pp.3-11, 1989

37. "Novel Two-Step SDB Technology For High Performance Thin-Film SOI/MOSFET Application", Electronics Letters, Vol.25, No.6, pp.394-395, 1989

38. "VLSI Fault Tolerance Design For Real-Time Signal Processing", Journal of Chinese Institute of Communication, Vol.10, No.3, pp.7-15, 1989(in Chinese)

39. "A Reliability Analysis Model for Fault Tolerance VLSI", Journal of Microelectronics and Computer, Vol.7, No.6, pp.36-39, 1988(in Chinese)

40. "Diffusion and Oxide Viscous Flow Mechanism in SDB Process and Silicon Wafer Rapid Thermal Bonding", Electronics Letters, Vol.26, No.11, pp.697-699, 1990

41. "Investigation on Silicon wafer Direct Bonding Mechanism", Journal of Applied Science, Vol.8, No.4, pp.303-308, 1990(in Chinese)

42. "Investigation of Surface Activation in Silicon Wafer Direct Bonding", Acta Electronica Sinica, Vol.18, No.3, pp.32-36, 1990(in Chinese)

43. "High Temperature Microelectronics I: Investigation on High Temperature Performance of Silicon Devices", Microelectronics, Vol.20, No.3, 1990(in Chinese)

44. "The Method for VLSI Architecture Synthesis", Journal of Microelectronics and Computer, Vol.7, No.12, pp.8-10, 1990(in Chinese)

45. "Elimination of Kink Effect in Fully Depleted Complementary Buried-Channel SOI MOSFET (FD CBCMOS) Based on Silicon Direct Bonding Technology", IEEE Electron Device Letters, Vol.12, No.3, pp.101-103, 1991

46. "Silicon Wafer Direct Bonding Mechanism and Rapid Thermal Bonding Technology", Acta Electronica Sinica, Vol.19, No.2, pp.27-33, 1991(in Chinese)

47. "Void Elimination by Lateral Gap Diffusion", Electronics Letters, Vol.27, No.3, pp.288-289, 1991

  1. "CMOS Interface Technology for VLSI System", International; Vacation School on VLSI Fabrication, Edinburgh, April, 1984

2. "Design of N-Well in Fully Implanted CMOS IC", Third National Conference on Semiconductor IC and Silicon Materials, He Fei, Chinas, 1984

3. "Silicon Integrated CMOS Flow Sensor", 4th National Conference on Semiconductor and Silicon Materials, Huhehode, China, 1985

4. "A Low/High Voltage PMOS Transfer IC", ibid

5. "A CMOS High/Low Voltage Driver", ibid

6. "A Constant Temperature MOS Flow Sensor", 15th European Solid-State Device Research Conference(ESSDERC'85), ECA, 9H, pp.88-89, Aachen, W.Germany, 1985

7. "A Fully Compatible Gas Flow Sensor", 7th European Conference on Electronics, AVII.3, pp.590-595, Paris, France,1986

8. "PMOS Design for VLSI CMOS by a C-V Technique", 5th Australia and Pacific Region Microelectronics Conference, Adelaide, Australia, pp.353-359, May 1986

9. "On Evaluation of Fault tolerance Techniques for VLSI Chips", IEEE Asian electronics Conference, Paper No.F609, Hong Kong,1987

10. "Calculation Model of Yield and Reliability with Two-Level Redundancy in WSI", 2nd Fault Tolerance Computation Research Conference, Shanghai, 1987

11. "A New Type High Performance Device Design for VLSI Digital Systems", European Solid-state Device Research Conference(EESDERC'87), Bologna, Italy, pp.403-406,1987

12. "Device Design of a High Voltage BiCMOS", European Solid-state Device Research Conference(EESDERC'87), Bologna, Italy, pp.1059-1061,1987

13. "A Novel Complementary Buried Channel SOI/FET for VHSIC Applications", International Symposium on Electronic Devices, Circuits and Systems(ISELDECS'87), Paper No.BM1.4, Kharagpur, India, 1987

14. "Fault Tolerance Design of VLSI Two Dimensional Systolic Processor Arrays", IEEE PCCC'88 (Phoenix Conference on Computers and Communications), Phoenix, USA, 1988

15. "Fully Integrated Flow Sensor", 1st National Conference on Sensor Technology, Best Paper Award, Changzhou, China,1987

16. "Si on SiO2 by Solid-State Diffusion Bonding (SSDB) Technology", International Conference on Solid State Device and Material (SSDM), pp.197-200, Tokyo, Japan, 1988

17. "Cool Plasma Activated Surface in Silicon Direct Bonding Technology", European Solid-state Device Research Conference(EESDERC'88), Montpellier, France, pp.c4-79-82,1988

18. "Silicon on SiO2 by two-step Thermal Bonding(TSTB) Process", IEEE SOS/SOI Technology Workshop, Georgia, USA, 1988

19. "A New VLSI Architecture Based On Data Flow Computing Model", International Symposium on Mini and Microcomputer, Florida, USA, 1988

20. "A Fault Tolerance VLSI Matrix Multiplication Chip MC1001 for Digital Signal Processing", CompEuro, Hamberg, West Germany, 1989

21. "A Fault Tolerance VLSI Matrix Multiplication Chip MCL001 for Digital Signal Processing", International Symposium on Mini and Microcomputer, Florida, USA, 1988

22. "A Novel Thinning Technology for SOI/SDB", Material and Process Characterization for VLSI, (ICMPC'88), China,1988

23. "Investigation on SDB Bonding Mechanism", International Conference on Semiconductor and Circuit Technology (Invited Paper) (ICSICT'89), Beijing, China, 1989

24. "Investigation on Some Material Properties of SOI/SDB Film", International Conference on Insulator Films on Semiconductors (INFOS), Munich, West Germany, 1989

25. "Investigation on Temperature Compensation of Integrated Flow Sensors", Sino-Japan Instrumentation, Measurement and Automatic Control Conference, GuonZhou, China, 1989

26. "A High Performance VLSI Structure--SOI/SDB Complementary Buried Channel MOS(CB CMOS) IC", European Solid-state Device Research Conference(EESDERC'90), Nottingham, U.K., 1990

27. "Application of Hydrogenation to Improve GaAs/Si MOSFETs and IC Performance by PECVD SiN", 22nd International Conference on Solid State Device and Materials(SSDM), Sendai, Japan, 1990

28. "A New Interpretation of the Orientation Effect in GaAs MESFETs", 22nd International Conference on Solid State Device and Materials(SSDM), Sendai, Japan, 1990

29. "Dynamic Fault Tolerance Design for Sequence Logic", International Conference on Signal and Systems, Chengdu, China, 1990

30. "The VLSI Implementation for Robot Rajectory and Velocity Control", International Conference on Signal and Systems, Chengdu, China, 1990

31. "The application of Diamond Film in Silicon Micro- actuators", First International Diamond Film Conference, Switzerland, 1990

32. "High Performance ASIC Structure-Fully depleted Buried Channel MOSFET IC", First National ASIC Conference, Wuxi, 1990

33. "Investigation on Cell Design of Sea of Gates", First National ASIC Conference, Wuxi, 1990

34. "Dynamic Fault Tolerance Design for Sequence Logic", First National ASIC Conference, Wuxi, 1990

35. "VLSI Architecture Design for Robot Applications", First National ASIC Conference, Wuxi, 1990

36. "Elimination of Kink Effect in Fully Depleted Buried Channel SOI MOSFET Based on Silicon Direct Bonding Technology", Paper No.3.28, IEEE SOS/SOI Technology Conference, Florida, 1990

37. "GaAs Piezoelectric Modulated Resistor for Sensor", Dig, of Tech. Papers, 1991 International Conference on Solid State Sensors and Actuators, p.916, San Francisco, USA, 1991

38. "Gas-Lubricated Micro-Bearings for Microactuators", Dig, of Tech. Papers, 1991 International Conference on Solid State Sensors and Actuators, p.894, San Francisco, USA, 1991

  1. "A Low/High Voltage Driver", 85200131.2(Chinese Patent)

2. "A PMOS Low/High Voltage Converter", 85200132.0 (Chinese Patent)

3. "A CMOS Integrated Flow Sensor", 85200263.7(Chinese Patent)

4. "A Constant Chip Temperature CMOS Integrated Flow Sensor", 8524747(Chinese Patent)

5. "Process Technology of Semiconductor Direct Bonding", 87108314(Chinese Patent)

6. "A Dual-gate High Voltage MOS IC", 87208602X(Chinese Patent)

  1. Q.-Y. Tong, "Introduction to VLSI Physics", Electronic Industry Press, 1988, 384 pages, ISBN7-5053-0081-4/TN.44

2. Q.-Y. Tong, "Introduction to Microelectronic System Design", Southeast University Press, 1990, 444 pages, ISBN7-81023-219-3

1. Q.-Y. Tong, "CMOS Interface Technology for VLSI System", International; Vacation School

on VLSI Fabrication, Edinburgh, April, 1984

2. Q.-Y. Tong, "Investigation on SDB Bonding Mechanism", International Conference on

Semiconductor and Circuit Technology (Invited Paper) (ICSICT'89), Beijing, China, 1989

3. Q.-Y. Tong and U. Gösele, "Semiconductor Wafer Bonding: Recent Developments", Invited

paper, Materials Chem. and Phys., 37 (1994) 101

4. U. Gösele, M. Reiche and Q.-Y. Tong, "Lleben ohne Klebstoff" (in German), Phys. B1, 50

(1994) 851

5. U. Gösele, M. Reiche and Q.-Y. Tong, "Properties of SIMOX and Bonded SOI Material",

Microelectronic Engineering, 28 (1995) 391

6. U. Gösele, H. Stenzel, M. Reiche, T. Martini, J. Steinkirchner and Q.-Y. Tong, "History and

Future of Semiconductor Wafer Bonding", Solid State Phenomena, 47-48 (1996) 33

7. U. Gösele and Q.-Y. Tong, "Silicon Layer Transfer by Wafer Bonding", Invited paper,

Proc.of 2nd Intl. Symp. on Semicond. Wafer Bonding: Science, Technol. and Applications,

The Electrochem. Soc.,93-29 (1993) 395

8. U. Gösele and Q.-Y. Tong, "Semiconductor Wafer Bonding: An Overview", Invited talk, Intl.

Conf. on Adv. Materials, Tokyo, Aug.31, 1993

9. Q.-Y. Tong and U. Gösele, "Process Design of Low Temperature Wafer Bonding", Proc.of

3rd Intl. Symp. on Semicond.Wafer Bonding: Science, Technol. and Applications, The

Electrochem. Soc.,95-7(1995) 78

10. U. Gösele, M. Reiche and Q.-Y. Tong, "Properties of SIMOX and Bonded SOI Material",

Invited talk, Proc. of 9th Beennial Intl. Conf. on Insulating Films on Semiconductor",

Grenoble, France, June 1995

11. U. Gösele, M. Reiche and Q.-Y. Tong, "Properties of SIMOX and Bonded SOI Material",

Invited talk, Proc. of 9th Beennial Intl. Conf. on Insulating Films on Semiconductor",

Grenoble, France, June 1995

12. U. Gösele, M. Reiche and Q.-Y. Tong, "Wafer Bonding: An Overview", ICSITC'95,

Beijing, Oct. (1995) 243

13. U. Gösele, K. Gutjahr, S. Hopfe, S. Mack, T. Martini, M. Reiche and Q.-Y. Tong, "Silicon

Wafer Bonding: Recent Developments", Proc. 2nd Int. Symp. on Advanced Science and

Technology of Silicon Materials, Nov. 96, Hawaii, p.206

1. "CMOS process design", National Physics and Engineering Laboratories, Lower Hutt, New Zealand, March, 1986

2. "CMOS integrated flow sensors", University of Auckland, Auckland, New Zealand, April 1986

3. "Microelectronic system design and fabrication", Royal Melbourne Institute of Technology, Melbourne, Australia, May, 1986

4. "High voltage BiCMOS IC design", SGS Corp. Milan, Italy, Sept. 1987

5. "Silicon direct bonding and microelectronic system design", Motorola European Design Center, Geneva, Switzerland, Sept. 1987.

6. "Silicon compatible technology", Seimens Corp. Munich, Germany, Sept. 1988

7. "Silicon wafer direct bonding and application", Queen's University of Belfast, Belfast, U.K. Sept. 1990

8. "Silicon direct bonding and application", Institute of Microelectronic Stuttgart, Stuttgart, Germany, Sept. 1990

9. "Silicon direct bonding technology and its applications", Duke University, Durham, USA, July 1, 1991

10. "Wafer bonding mechanisms", Duke University, Durham, USA, April, 1992

11. "Semiconductor wafer bonding", Kiel University, Kiel, Germany, Nov. 11, 1993

12. "Semiconductor wafer direct bonding", University of California, Berkeley, USA, Dec. 9, 1996

13. "Semiconductor wafer direct bonding technology", Intel Corp. Santa Clara, USA, Dec. 12, 1996